ValueRAM 4GB DDR3-1600 - 4 GB
non-ECC - SO-DIMM - CL11 - 1 x 4 GB - DDR3 - 1600 MHz - 204-pin SO-DIMM
Brand: Kingston
SKU: KVR16S11S8/4
$83.88
Price as listed. Shipping charges calculated at checkout.
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NOTE: The information below is provided for your convenience only; the accuracy of the specifications cannot be guaranteed. However, if necessary, please check with us before purchasing. Data provided by 1 World Sync.
General
Component for
Notebook
Internal memory
4096 MB
Memory layout (modules x size)
1 x 4 GB
Memory layout
1 x 4096 MB
Internal memory type
DDR3
Memory clock speed
1600 MHz
Memory form factor
204-pin SO-DIMM
CAS latency
11
Kingston Technology ValueRAM 4GB DDR3-1600. Component for: Notebook, Internal memory: 4 GB, Memory layout (modules x size): 1 x 4 GB, Internal memory type: DDR3, Memory clock speed: 1600 MHz, Memory form factor: 204-pin SO-DIMM, CAS latency : 11
| Estimate Gross Weight | 0.014 |
|---|
https://www.kingston.com/us/memory/search/?partid=kvr16s11s8/4
Kingston Technology is the world's independent memory leader and is well-known for providing high quality memory products at an attractive price. Kingston ValueRAM is your best source for industry-standard memory to maximise the performance and productivity of your system. Built with A-grade components only, Kingston ValueRAM memory modules come with a lifetime warranty.
Kingston Technology is the world's independent memory leader and is well-known for providing high quality memory products at an attractive price. Kingston ValueRAM is your best source for industry-standard memory to maximise the performance and productivity of your system. Built with A-grade components only, Kingston ValueRAM memory modules come with a lifetime warranty.
- JEDEC 1.5V Power Supply
- Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ┬▒ 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85┬░C, 3.9us at 85┬░C < TCASE < 95┬░C┬║
- Asynchronous Reset
- PCB: Height 1.180ΓÇ¥ (30.00mm), double sided component
- VDDQ = 1.5V
- 800MHz fCK for 1600Mb/sec/pin
- 8 independent internal banks
- Programmable CAS latency: 11, 10, 9, 8, 7, 6, 5
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- 8-bit pre-fetch
- Burst Length: 8 (interleave without any limit, sequential with starting address ΓÇ£000ΓÇ¥ only), 4 with tCCD = 4 which does not allow seamless read or write (either on the fly using A12 or MRS)
- Bi-directional Differential Data Strobe
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