ValueRAM KVR13N9S8/4 memory module 4 GB 1 x 4 GB DDR3 1333 MHz
Non-ECC - CL9 - 1.5V - Unbuffered - DIMM Module
Brand: Kingston
SKU: KVR13N9S8/4
$83.88
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General
Component for
PC/Server
Internal memory
4 GB
Memory layout (modules x size)
1 x 4 GB
Internal memory type
DDR3
Memory clock speed
1333 MHz
Memory form factor
240-pin DIMM
CAS latency
9
Product colour
Green
Kingston Technology ValueRAM KVR13N9S8/4. Component for: PC/Server, Internal memory: 4 GB, Memory layout (modules x size): 1 x 4 GB, Internal memory type: DDR3, Memory clock speed: 1333 MHz, Memory form factor: 240-pin DIMM, CAS latency : 9, Product colour: Green
| Estimate Gross Weight | 0.034 |
|---|
https://www.ec.kingston.com/ecom/hyperx_us/partsinfo.asp?root=&ktcpartno=KVR13N9S8/4
This document describes ValueRAM's 512M x 64-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory module, based on eight 512M x 8-bit DDR3-1333 FBGA compo- nents. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact fingers. The electrical and mechanical specifica- tions are as follows:
- JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
- VDDQ = 1.5V (1.425V ~ 1.575V)
- 667MHz fCK for 1333Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 9, 8, 7, 6
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address ΓÇ£000ΓÇ¥ only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration: Internal self calibration through ZQ pin (RZQ : 240 ohm ┬▒ 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85┬░C, 3.9us at 85┬░C < TCASE < 95┬░C
- Asynchronous Reset
- PCB: Height 0.740ΓÇ¥ (18.75mm) or 1.180ΓÇ¥ (30.00mm)
This document describes ValueRAM's 512M x 64-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory module, based on eight 512M x 8-bit DDR3-1333 FBGA compo- nents. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact fingers. The electrical and mechanical specifica- tions are as follows:
- JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
- VDDQ = 1.5V (1.425V ~ 1.575V)
- 667MHz fCK for 1333Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 9, 8, 7, 6
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address ΓÇ£000ΓÇ¥ only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration: Internal self calibration through ZQ pin (RZQ : 240 ohm ┬▒ 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85┬░C, 3.9us at 85┬░C < TCASE < 95┬░C
- Asynchronous Reset
- PCB: Height 0.740ΓÇ¥ (18.75mm) or 1.180ΓÇ¥ (30.00mm)
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